DPLS320A datasheet(2/4 Pages) DIODES

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 5)

⎯

-100

VCB = -20V, IE = 0

Collector-Base Cutoff Current

ICBO

⎯

-50

μA

VCB = -20V, IE = 0, TA = 150°C

Emitter-Base Cutoff Current

IEBO

⎯

-100

VEB = -5V, IC = 0

Collector-Base Breakdown Voltage

V(BR)CBO

-20

⎯

IC = -100μA

Collector-Emitter Breakdown Voltage

V(BR)CEO

-20

⎯

IC = -10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

⎯

IE = -100μA

ON CHARACTERISTICS (Note 5)

220

⎯

VCE = -2V, IC = -0.1A

220

⎯

VCE = -2V, IC = -0.5A

200

⎯

VCE = -2V, IC = -1A

150

⎯

VCE = -2V, IC = -2A

DC Current Gain

hFE

100

⎯

VCE = -2V, IC = -3A

⎯

-80

IC = -0.5A, IB = -50mA

⎯

-150

IC = -1A, IB = -50mA

⎯

-250

IC = -2A, IB = -100mA

⎯

-230

IC = -2A, IB = -200mA

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-330

IC = -3A, IB = -300mA

Equivalent On-Resistance

RCE(SAT)

⎯

115

Ω IE = -2A, IB = -200mA

⎯

-1.1

IC = -2A, IB = -100mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.2

IC = -3A, IB = -300mA

Base-Emitter Turn-on Voltage

VBE(ON)

⎯

-1.2

VCE = -2V, IC = -1A

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

100

215

⎯

MHz

VCE = -5V, IC = -100mA,

f = 100MHz

Output Capacitance

Cob

⎯

VCB = -10V, f = 1MHz

Notes:

Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs. Ambient Temperature

200

300

400

500

600

700

800

Note 3

-V

, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

123

0.5

1.0

1.5

2.0

2.5

I = -2mA

I = -4mA

I = -6mA

I = -8mA

I = -10mA

DS31339 Rev. 4 - 2

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