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DMB53D0UDW 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMB53D0UDW
功能描述  N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMB53D0UDW 数据表(HTML) 2 Page - Diodes Incorporated

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DMB53D0UDW
Document number: DS31675 Rev. 5 - 2
2 of 7
www.diodes.com
December 2009
© Diodes Incorporated
DMB53D0UDW
Electrical Characteristics - MOSFET @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
50
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
10
μA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
1.0
5.0
μA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
0.7
0.8
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
3.1
4
Ω
VGS = 4V, ID = 100mA
⎯
4
5
VGS = 2.5V, ID = 80mA
Forward Transconductance
gFS
180
⎯
⎯
mS
VDS = 10V, ID = 100mA,
f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
25
⎯
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
⎯
5
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
2.1
⎯
pF
Electrical Characteristics - NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
(Note 4)
V(BR)CBO
50
—
—
V
IC = 10μA, IB = 0
Collector-Emitter Breakdown Voltage
(Note 4)
V(BR)CEO
45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
(Note 4)
V(BR)EBO
6
—
—
V
IE = 1μA, IC = 0
DC Current Gain
(Note 4)
hFE
200
290
450
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage
(Note 4)
VCE(SAT)
—
—
100
300
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
(Note 4)
VBE(SAT)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
(Note 4)
VBE
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector Cut-Off Current
(Note 4)
ICBO
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
Collector-Emitter Cut-Off Current
(Note 4)
ICES
—
—
100
nA
VCE = 45V
Gain Bandwidth Product
fT
100
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Output Capacitance
COBO
—
—
4.5
pF
VCB = 10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
VCE = 5V, RS = 2.0kΩ,
f = 1.0kHz, BW = 200Hz
Notes:
4. Short duration pulse test used to minimize self-heating effect.



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