DMN2020LSN

Document number: DS31946 Rev. 2 - 2

3 of 6

www.diodes.com

September 2009

© Diodes Incorporated

DMN2020LSN

0

0.01

0.02

0.03

0.04

0.05

0.06

02

4

6

8

10

12

14

16

18

20

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V

= 1.8V

GS

V

= 4.5V

GS

V

= 2.5V

GS

0

0.01

0.02

0.03

0.04

0

2

4

6

8

1012

14

16

1820

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

V

= 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

V

= 2.5V

I = 150mA

GS

D

V

= 4.5V

I = 500mA

GS

D

0

0.01

0.02

0.03

0.04

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

V

= 4.5V

I = 10A

GS

D

V

= 2.5V

I = 5A

GS

D

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

I = 1mA

D

I = 250µA

D

0

5

10

15

20

0.4

0.6

0.8

1

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

T = 25°C

A