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FMMT620TC 数据表(PDF) 4 Page - Diodes Incorporated

部件名 FMMT620TC
功能描述  80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

FMMT620TC 数据表(HTML) 4 Page - Diodes Incorporated

  FMMT620TC Datasheet HTML 1Page - Diodes Incorporated FMMT620TC Datasheet HTML 2Page - Diodes Incorporated FMMT620TC Datasheet HTML 3Page - Diodes Incorporated FMMT620TC Datasheet HTML 4Page - Diodes Incorporated FMMT620TC Datasheet HTML 5Page - Diodes Incorporated FMMT620TC Datasheet HTML 6Page - Diodes Incorporated FMMT620TC Datasheet HTML 7Page - Diodes Incorporated  
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FMMT620
Document number DS32123 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT620
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
100
180
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 5)
V(BR)CEO
80
110
V
IC = 10mA
Emitter-Base Breakdown Voltage
V(BR)EBO
7
8
V
IE = 100µA
Collector Cut-off Current
ICBO
100
nA
VCB = 80V
Emitter Cut-off Current
IEBO
100
nA
VEB = 5.5V
Collector Emitter Cut-off Current
ICES
100
nA
VCES = 80V
Static Forward Current Transfer Ratio (Note 5)
hFE
200
300
110
60
20
450
450
170
90
30
10
900
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
Collector-Emitter Saturation Voltage (Note 5)
VCE(sat)
15
45
145
160
20
60
185
200
mV
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 20mA
IC = 1.5A, IB = 50mA
Base-Emitter Saturation Voltage (Note 5)
VBE(sat)
0.86
1.0
V
IC = 1.5A, IB = 50mA
Base-Emitter Saturation Voltage (Note 5)
VBE(on)
0.82
0.95
V
IC = 1.5A, VCE = 2V
Transition Frequency
fT
100
160
MHz
IC = 50mA, VCE = 10V
f = 100MHz
Collector Output Capacitance
Cobo
11.5
18
pF
VCB = 10V, f = 1MHz
Turn-On Time
t(on)
86
ns
VCC = 10V, IC = 500mA
IB1 = IB2 = 25mA
Turn-Off Time
t(off)
1128
ns
Notes:
5. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%



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