BFS17N datasheet(3/6 Pages) DIODES

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BFS17N

Document Number DS32160 Rev. 2 - 2

3 of 6

www.diodes.com

August 2010

A Product Line of

Diodes Incorporated

BFS17N

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

−

IC = 10µA

Collector-Emitter Breakdown Voltage (Note 5)

V(BR)CEO

−

IC = 1mA

Emitter-Base Breakdown Voltage

V(BR)EBO

−

IE = 10µA

Collector Cutoff Current

ICBO

−

0.5

µA

VCB = 10V

Emitter Cutoff Current

IEBO

−

0.5

µA

VEB = 2V

Static Forward Current Transfer Ratio (Note 5)

hFE

−

180

−

IC = 5mA, VCE = 10V

Collector-Emitter Saturation Voltage (Note 5)

VCE(sat)

−

0.5

IC = 25mA, IB = 5mA

Transition Frequency (Note 5)

1.4

3.2

−

GHz

IE = 25mA, VCE = 5V,

f = 500MHz

Collector Output Capacitance (Note 5)

Cob

−

0.8

1.5

VCB = 10V, f = 1MHz

Notes:

5. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle

≤ 2%

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