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BAS521 数据表(PDF) 1 Page - Diodes Incorporated

部件名 BAS521
功能描述  HIGH VOLTAGE SWITCHING DIODE
PDF  4 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

BAS521 数据表(HTML) 1 Page - Diodes Incorporated

  BAS521 Datasheet HTML 1Page - Diodes Incorporated BAS521 Datasheet HTML 2Page - Diodes Incorporated BAS521 Datasheet HTML 3Page - Diodes Incorporated BAS521 Datasheet HTML 4Page - Diodes Incorporated  
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BAS521
Document number: DS32175 Rev. 4 - 2
1 of 4
www.diodes.com
July 2010
© Diodes Incorporated
BAS521
HIGH VOLTAGE SWITCHING DIODE
Features
Fast Switching Speed: max. 50 ns
High Reverse Breakdown Voltage: 300V
Low Leakage Current: 100nA at room temperature
Ultra Small Plastic SMD Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
"Green" Device (Note 4)
Mechanical Data
Case: SOD-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.0014 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
300
V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
300
V
Forward Current (Note 2)
IF
250
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
IFSM
4.5
A
Repetitive Peak Forward Current (Note 2)
IFRM
1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 2)
PD
325
mW
Thermal Resistance Junction to Ambient Air (Note 2)
RθJA
385
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V(BR)R
300
V
IR = 100μA
Forward Voltage
VF
1.1
V
IF = 100mA
Reverse Current (Note 1)
IR
50
150
100
nA
nA
μA
VR = 5V
VR = 250V
VR = 250V, TJ = 150°C
Total Capacitance
CT
5
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
50
ns
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Top View
1
2
Device Schematic


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