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BAW101S 数据表(PDF) 1 Page - Diodes Incorporated |
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BAW101S 数据表(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  BAW101S Document number: DS32177 Rev. 4 - 2 1 of 4 www.diodes.com July 2010 © Diodes Incorporated BAW101S HIGH VOLTAGE DUAL SWITCHING DIODE Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Temperature • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • "Green" Device (Note 4) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage Single Diode VRRM 300 600 V Series Connection Working Peak Reverse Voltage DC Blocking Voltage Single Diode VRWM VR 300 600 V Series Connection RMS Reverse Voltage VR(RMS) 212 V Forward Current (Note 2) Single Diode Loaded IF 250 140 mA Double Diode Loaded Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs IFSM 4.5 A Repetitive Peak Forward Current @ t = 8.3ms (Note 2) IFRM 625 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 2) PD 300 mW Thermal Resistance Junction to Ambient Air (Note 2) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V(BR)R 300 ⎯ V IR = 100μA Forward Voltage VF ⎯ 1.1 V IF = 100mA Reverse Current (Note 1) IR ⎯ ⎯ ⎯ 50 150 75 nA nA μA VR = 5V VR = 250V VR = 250V, TJ = 150°C Total Capacitance CT ⎯ 2.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 50 ns IF = IR = 30mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. Halogen and Antimony Free. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Top View Device Schematic 12 3 65 4 |
类似零件编号 - BAW101S |
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类似说明 - BAW101S |
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