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ZXTP558LSTZ 数据表(PDF) 2 Page - Diodes Incorporated

部件名 ZXTP558LSTZ
功能描述  400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR
PDF  5 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXTP558LSTZ 数据表(HTML) 2 Page - Diodes Incorporated

  ZXTP558LSTZ Datasheet HTML 1Page - Diodes Incorporated ZXTP558LSTZ Datasheet HTML 2Page - Diodes Incorporated ZXTP558LSTZ Datasheet HTML 3Page - Diodes Incorporated ZXTP558LSTZ Datasheet HTML 4Page - Diodes Incorporated ZXTP558LSTZ Datasheet HTML 5Page - Diodes Incorporated  
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ZXTP558L
Document number: DS32186 Rev. 1 - 2
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP558L
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note x)
PD
1
W
Thermal Resistance, Junction to Ambient @ TA = 25°C
RθJA
125
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-400
⎯
⎯
V
IC = -100μA
Collector-Emitter Breakdown Voltage (Note 4)
V(BR)CEO
-400
⎯
⎯
V
IC = -10mA
Emitter-Base Breakdown Voltage
V(BR)EBO
-7
⎯
⎯
V
IE = -100μA
Collector Cutoff Current
ICBO
⎯
⎯
-100
nA
VCB = -320V
Emitter Cutoff Current
ICES
⎯
⎯
-100
nA
VCE = -320V
Base Cutoff Current
IEBO
⎯
⎯
-100
nA
VBE = -4V
DC Current Gain (Note 4)
hFE
100
100
⎯
⎯
⎯
300
⎯
⎯
VCE = -10V, IC = -1mA
VCE = -10V, IC = -50mA
Collector-Emitter Saturation Voltage (Note 4)
VCE(sat)
⎯
⎯
⎯
⎯
-0.2
-0.5
V
IC = -20mA, IB = -2mA
IC = -50mA, IB = -6mA
Base-Emitter Turn-On Voltage
VBE(on)
⎯
⎯
-0.9
V
VCE = -10V, IC = -50mA
Base-Emitter Saturation Voltage
VBE(sat)
⎯
⎯
-0.9
V
IC = -50mA, IB = -5mA
Output Capacitance (Note 4)
Cobo
⎯
⎯
5
pF
VCB = -20V, f = 1.0MHz
Current Gain-Bandwidth Product
fT
50
⎯
⎯
MHz
VCE = -20V, IC = -10mA,
f = 20MHz
Turn-On Time
ton
⎯
95
⎯
ns
VCE = -100V, IC = -50mA
IB1 = 5mA, IB2 = -10mA
Turn-Off Time
toff
⎯
1600
⎯
ns
Notes:
4. Measured under pulsed conditions. Pulse width = 300μs; Duty cycle ≤ 2%.



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