FCX458 datasheet(1/1 Pages) DIODES

部件名	FCX458

功能描述	SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

PDF	1 Pages

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – MARCH 1996

FEATURES

*

400 Volt V

CEO

*P

tot= 1 Watt

COMPLEMENTARY TYPE –

FCX458

PARTMARKING DETAIL –

P58

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

-400

V

Collector-Emitter Voltage

V

CEO

-400

V

Emitter-Base Voltage

V

EBO

-5

V

Continuous Collector Current

I

C

-200

mA

Peak Pulse Current

I

CM

-500

mA

Power Dissipation at T

amb=25°C

P

tot

1W

Operating and Storage Temperature Range

T

j:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-400

V

I

C=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-400

V

I

C=-10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

-5

V

I

E=-100µA

Collector Cut-Off Current

I

CBO ;ICES

-100

nA

VCB=-320V; VCES = 320V

Emitter Cut-Off Current

I

EBO

-100

nA

V

EB=-4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-0.2

-0.5

V

I

C=-20mA, IB=-2mA*

I

C=-50mA, IB=-6mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.9

V

I

C=-50mA, IB=-5mA*

Base-Emitter

Turn On Voltage

V

BE(on)

-0.9

V

IC=-50mA, VCE=-10V*

Static Forward Current

Transfer Ratio

h

FE

100

15

300

I

C=-1mA, VCE=-10V

I

C=-50mA, VCE=-10V*

I

C=-100mA, VCE=-10V*

Transition Frequency

f

T

50

MHz

I

C=-10mA, VCE=-20V

f=20MHz

Collector-Base

Breakdown Voltage

C

obo

5pF

V

CB=-20V, f=1MHz

Switching times

t

on

t

off

95 Typical

1600 Typical

ns

I

C=-50mA, VC=-100V

I

B1=-5mA, IB2=-10mA

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FZT558 datasheet.

3 - 90

FCX558

C

B

E

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类似说明 - FCX458

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