FMMT451 datasheet(1/2 Pages) DIODES

部件名	FMMT451

功能描述	SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR

PDF	2 Pages

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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SOT23 NPN SILICON PLANAR

HIGH PERFROMANCE TRANSISTOR

ISSUE 3 - OCTOBER 1995

7

FEATURES

* Low equivalent on-resistance; RCE(sat) 400mΩ at 1A

* 1 Amp continuous current

*Ptot= 500 mW

COMPLEMENTARY TYPE

FMMT551

PARTMARKING DETAIL

451

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Base Current

IB

200

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

MIN. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

80

V

IC=100µA

Collector-Emitter

Sustaining Voltage

VCEO(sus) 60

V

IC=10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Current ICBO

0.1

µ

A

VCB=60V

Emitter Cut-Off Current

IEBO

0.1

µ

A

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.35

V

IC=150mA, IB=15mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.1

V

IC=150mA, IB=15mA*

Static Forward Current

Transfer Ratio

hFE

50

10

150

IC=150mA, VCE=10V*

IC=1A, VCE=10V*

Transition

Frequency

fT

150

MHz

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

15

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMT451

C

B

E

3 - 109

3 - 108

FMMT451

TYPICAL CHARACTERISTICS

VCE(sat) v IC

IC -

Collector Current (Amps)

IC -

Collector Current (Amps)

IC -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

IC -

Collector Current (Amps)

VBE(on) v IC

40

80

120

160

200

0

10

0.2

0.4

0.6

0.8

Switching Speeds

IC -

Collector Current (Amps)

0.001

0.01

0.1

1

IC/IB=10

0.1

1

IB1=IB2=IC/10

0.01

ts

tf

td

tr

ts

ns

tf,tr,td

ns

100

50

150

0

VCE=2V

0

IC/IB=10

0.2

0.4

0.8

1.0

1.2

1.4

1.6

1.8

0.6

VCE=2V

ts

tf

td

tr

800

400

200

600

0

0.001

1

0.01

0.1

10

0.2

0.4

0.8

1.0

1.2

1.4

1.6

1.8

0.6

0.001

1

0.01

0.1

10

0.001

1

0.01

0.1

10

VCE=10V

100

Single Pulse Test at Tamb=25°C

10

1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

110

0.1

0.01

1s

DC

100ms

10ms

100µs

1ms

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