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FMMT495 数据表(PDF) 2 Page - Diodes Incorporated

部件名 FMMT495
功能描述  SOT23 NPN SILICON PLANAR MEDIUM
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

FMMT495 数据表(HTML) 2 Page - Diodes Incorporated

  FMMT495 Datasheet HTML 1Page - Diodes Incorporated FMMT495 Datasheet HTML 2Page - Diodes Incorporated  
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SOT23 NPN SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
PARTMARKING DETAIL –
495
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
170
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC
1A
Peak Pulse Current
ICM
2A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
170
V
IC=100µA
VCEO(sus)
150
V
IC=10mA*
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Currents
ICBO
100
nA
VCB=150V
ICES
100
nA
VCE=150V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.2
0.3
V
V
IC=250mA, IB=25mA*
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=500mA, IB=50mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=500mA, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
100
100
50
10
300
IC=1mA, VCE=10V
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
Transition Frequency
fT
100
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT495
C
B
E
3 - 123
FMMT495
3 - 124
10A
1A
10mA
100mA
1mA
-55°C
+25 ° C
+100 ° C
I+/I*=10
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
VBE(sat) v IC
0
0.2
100mA
10mA
0.4
0.6
0.8
1.0
10A
1A
hFE V IC
IC-Collector Current
1mA
100mA
10mA
10A
1A
80
0
240
160
320
10mA
1mA
IC-Collector Current
VBE(on) v IC
100mA
1A
10A
0.6
0.8
1.0
0.4
0.2
0
IC-Collector Current
VCE(sat) v IC
1mA
0
0.1
100mA
10mA
+25 ° C
0.2
0.3
0.4
I+/I*=10
10A
1A
0.4
+100 °C
-55 °C
+25 °C
+100 ° C
-55°C
+25 ° C
-55 °C
+25 °C
+100 °C
I+/I*=10
V+-=10V
V+-=10V
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1
10
100
1s
DC
100ms
10ms
100µs
1ms
1
0
0.1
0.3
0.2
1mA
0.01
I+/I*=50
0.001
1000
TYPICAL CHARACTERISTICS



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