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FMMT558 数据表(PDF) 2 Page - Diodes Incorporated

部件名 FMMT558
功能描述  SOT23 PNP SILICON PLANAR
PDF  2 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

FMMT558 数据表(HTML) 2 Page - Diodes Incorporated

  FMMT558 Datasheet HTML 1Page - Diodes Incorporated FMMT558 Datasheet HTML 2Page - Diodes Incorporated  
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE – FMMT458
PARTMARKING DETAIL –
558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-500
mA
Continuous Collector Current
IC
-150
mA
Base Current
IB
-200
mA
Power Dissipation
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-400
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO)
-400
V
IC=-10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO; ICES
-100
nA
VCB=-320V; V+-=320V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-6mA *
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-50mA, IB=-5mA *
Base-Emitter Turn On Voltage
VBE(on)
-0.9
V
IC=-50mA, VCE=-10V *
Static Forward Current Transfer
Ratio
hFE
100
100
15
300
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V *
IC=-100mA, VCE=-10V*
Transition Frequency
fT
50
MHz
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base Breakdown
Voltage
Cobo
5pF
VCB=-20V, f=1MHz
Switching times
ton
toff
95
1600
ns
ns
IC=-50mA, VCE=-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMT558
3 - 134
C
B
E
3 - 133
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
VCE(sat) v IC
I+ -
Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
IC/IB=10
IC/IB=50
IC/IB=10
IC/IB=10
VCE=10V
VCE=10V
300
200
100
0.001
0.001
0.001
0.001
0.001
IC/IB=20
-55°C
+25°C
+100°C
+175°C
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100µs
1ms
1V
0.01
1000V
0.001
FMMT558



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