FMMT718TC datasheet(4/7 Pages) DIODES

4 / 7 page

FMMT718

Document Number DS31924 Rev. 2 - 2

4 of 7

www.diodes.com

August 2009

A Product Line of

Diodes Incorporated

FMMT718

SOT23 P N P SILI CON POWE R (SW I TCH I NG) TRAN SISTOR

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-20

-65

IC = -100 µA

Collector-Emitter Breakdown Voltage (Note 3)

V(BR)CEO

-20

-55

IC = -10 mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

-8.8

IE = -100 µA

Collector Cutoff Current

ICBO

-100

VCB = -15V

Emitter Cutoff Current

IEBO

-100

nA

VEB = -4V

Collector Emitter Cutoff Current

ICES

-100

VCE= -15V

Static Forward Current Transfer Ratio

(Note 3)

hFE

300

150

475

450

230

IC = -10mA, VCE = -2V

IC = -100mA, VCE = -2V

IC = -2A, VCE = -2V

IC = -4A, VCE = -2V

IC = -6A, VCE = -2V

Collector-Emitter Saturation Voltage

(Note 3)

VCE(sat)

-16

-130

-145

-40

-200

-220

IC =- 0.1A, IB = -10mA

IC = -1A, IB = -20mA

IC = -1.5A, IB = -50mA

Base-Emitter Turn-On Voltage(Note 3)

VBE(on)

-0.81

-1.0

IC = -2A, VCE = -2V

Base-Emitter Saturation Voltage(Note 3)

VBE(sat)

-0.87

-1.0

IC = -1.5A, IB = -50mA

Output Capacitance

Cobo

VCB = -10V. f = 1MHz

Transition Frequency

150

180

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Turn-On Time

ton

VCC=-10V, IC =-1A

IB1 = IB2 = -20mA

Turn-Off Time

toff

670

Notes:

3. Measured under pulsed conditions. Pulse width

≤ 300 µs. Duty cycle ≤ 2%

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