FMMT6517 datasheet(1/1 Pages) DIODES

部件名	FMMT6517

功能描述	SOT23 NPN SILICON PLANAR

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 NOVEMBER 1995 7

FEATURES

* 350 Volt VCEO

* Gain of 15 at IC=100mA

APPLICATIONS

* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS

COMPLEMENTARY TYPE -

FMMT6520

PARTMARKING DETAIL -

517

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

350

V

Collector-Emitter Voltage

VCEO

350

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

500

mA

Power Dissipation at Tamb= 25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

350

V

IC=100µA, IE=0

V(BR)CEO

350

V

IC=1mA, IB=0*

V(BR)EBO

5V

IE=10µA, IC=0

Cut-Off Currents

ICBO

50

nA

VCB=250V, IE=0

IEBO

50

nA

VEB=5V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

0.3

0.35

0.5

1.0

V

IC=10mA, IB=1mA*

IC=20mA, IB=2mA*

IC=30mA, IB=3mA*

IC=50mA, IB=5mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.80

0.85

0.90

V

IC=10mA, IB=1mA*

IC=20mA, IB=2mA*

IC=30mA, IB=3mA*

Base-Emitter Turn-On

Voltage

VBE(on)

2.0

V

IC=100mA, VCE=10V*

Static Forward Current

Transfer Ratio

hFE

20

30

20

15

200

IC=1mA, VCE=10V

IC=10mA, VCE=10V*

IC=30mA, VCE=10V*

IC=50mA, VCE=10V*

IC=100mA, VCE=10V*

Output Capacitance

Cobo

6pF

VCB=20V, f=1MHz

Transition Frequency

fT

50

MHz

IC=10mA, VCE=20V, f=20MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

FMMT6517

C

B

E

SOT23

3 - 171

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