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FMMTL619 数据表(PDF) 2 Page - Diodes Incorporated |
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FMMTL619 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page ![]() ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 100 210 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 50 70 V IC=5mA* Emitter-Base Breakdown Voltage V(BR)EBO 58.5 V IE=100µA Collector Cut-Off Current ICBO 10 nA VCB=40V Emitter Cut-Off Current IEBO 10 nA VEB=4V Collector Cut-Off Current ICES 10 nA VCE=40V Collector-Emitter Saturation Voltage VCE(sat) 24 60 100 195 45 100 180 330 mV mV mV mV IC=100mA, IB=10mA* IC=250mA, IB=10mA* IC=500mA, IB=25mA* IC=1.25A, IB=125mA* Base-Emitter Saturation Voltage VBE(sat) 1020 1100 mV IC=1.25A, IB=125mA* Base-Emitter Turn On Voltage VBE(on) 895 1000 mV IC=1.25A, VCE=2V* Static Forward Current Transfer Ratio hFE 200 300 200 100 30 400 450 400 230 50 IC=10mA, VCE=5V IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* Transition Frequency fT 180 MHz IC=50mA, VCE=10V f=100MHz Collector-Base Breakdown Voltage Cobo 6 8 pF VCB=10V, f=1MHz Switching times ton toff 182 379 ns ns IC=1A, VCC=10V IB1=-IB2=10mA *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% FMMTL619 |
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