FMMTL718 datasheet(1/3 Pages) DIODES

部件名	FMMTL718

功能描述	SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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1 / 3 page

C

B

E

SOT23 PNP SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 1 – DECEMBER 1997

FEATURES

Very low equivalent on-resistance; R

CE(sat)=210mΩ at 1.5A

COMPLEMENTARY TYPE –

FMMTL618

PARTMARKING DETAIL –

L78

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-20

V

Collector-Emitter Voltage

VCEO

-20

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-1

A

Peak Pulse Current

ICM

-2

A

Base Current

IB

-200

mA

Power Dissipation at Tamb=25°C

Ptot

-500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

FMMTL718

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