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LC35256DM 数据表(PDF) 7 Page - Sanyo Semicon Device

部件名 LC35256DM
功能描述  Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
PDF  8 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

LC35256DM 数据表(HTML) 7 Page - Sanyo Semicon Device

  LC35256DM Datasheet HTML 1Page - Sanyo Semicon Device LC35256DM Datasheet HTML 2Page - Sanyo Semicon Device LC35256DM Datasheet HTML 3Page - Sanyo Semicon Device LC35256DM Datasheet HTML 4Page - Sanyo Semicon Device LC35256DM Datasheet HTML 5Page - Sanyo Semicon Device LC35256DM Datasheet HTML 6Page - Sanyo Semicon Device LC35256DM Datasheet HTML 7Page - Sanyo Semicon Device LC35256DM Datasheet HTML 8Page - Sanyo Semicon Device  
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No. 5823-7/8
LC35256D-10, LC35256DM, DT-70/10
Write Cycle 1 (WE write) *6
Write Cycle 2 (CE write) *6
Notes: 1. Applications must set WE high during the read cycle.
2. External circuits in the application must not apply reverse phase signals to the DOUT pins when those pins are in the output state.
3. The time tWP is the period when CE and WE are both low. It is defined as the time from the fall of WE to the rise of CE or the rise of WE, whichever
occurs first.
4. The time tCW is the period when CE and WE are both low. It is defined as the time from the fall of CE to the rise of CE or the rise of WE, whichever
occurs first.
5. The data outputs (DOUT) go to the high-impedance state if any one of the following conditions hold: OE is high, CE is high, or WE is low.
6. OE must be held either high or low during the write cycle.
7. The DOUT pins have the same phase as the write cycle write data.
*5
*5



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