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CEB20P06 数据表(PDF) 2 Page - Chino-Excel Technology

部件名 CEB20P06
功能描述  P-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
标志 CET - Chino-Excel Technology

CEB20P06 数据表(HTML) 2 Page - Chino-Excel Technology

  CEB20P06 Datasheet HTML 1Page - Chino-Excel Technology CEB20P06 Datasheet HTML 2Page - Chino-Excel Technology CEB20P06 Datasheet HTML 3Page - Chino-Excel Technology CEB20P06 Datasheet HTML 4Page - Chino-Excel Technology  
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Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
125
105
-1
-3
-100
100
-1
V
nA
nA
µ
A
V
2
Gate Body Leakage Current, Reverse
On Characteristics b
Dynamic Characteristics c
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Test Condition
VGS = 0V, ID = -250µA
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ
Max
-60
VDS = -48V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10 V, ID = -9A
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6Ω
VDS = -30V, ID =-3.7A,
VGS = -10V
VDS = -30V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = -14A
615
140
45
11
4.5
50
15
22
9
100
30
17
2
4
22
-14
-2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
VGS = -4.5V, ID = -7A
175
140
m
m
CEP20P06/CEB20P06
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.



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