ZXMP3A13F datasheet(2/8 Pages) DIODES

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ZXMP3A13F

ISSUE 1 - MAY 2007

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient (a)

RθJA

200

°C/W

Junction to ambient (b)

RθJA

155

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph.

THERMAL RESISTANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDSS

-30

Gate Source Voltage

VGS

Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)

-1.6

-1.3

-1.4

Pulsed Drain Current (c)

IDM

-6

Continuous Source Current (Body Diode) (b)

-1.2

Pulsed Source Current (Body Diode) (c)

ISM

-6

Power Dissipation at TA=25°C (a)

Linear Derating Factor

625

mW/°C

Power Dissipation at TA=25°C (b)

Linear Derating Factor

806

6.4

mW/°C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS

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