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ZXMP3F37N8TA 数据表(PDF) 2 Page - Diodes Incorporated

部件名 ZXMP3F37N8TA
功能描述  30V SO8 P-channel enhancement mode MOSFET
PDF  8 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXMP3F37N8TA 数据表(HTML) 2 Page - Diodes Incorporated

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ZXMP3F37N8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGS
±20
V
Continuous Drain current @ VGS= -10V; TA=25°C
(b)
@ VGS= -10V; TA=70°C
(b)
@ VGS= -10V; TA=25°C
(a)
@ VGS= -10V; TL=25°C
(d)
ID
-8.5
-6.8
-6.4
-10.7
V
Pulsed Drain current
(c)
IDM
-39.5
A
Continuous Source current (Body diode)
(b)
IS
-4.4
A
Pulsed Source current (Body diode)
(c)
ISM
-39.5
A
Power dissipation at TA =25°C
(a)
Linear derating factor
PD
1.56
12.5
W
mW/
°C
Power dissipation at TA =25°C
(b)
Linear derating factor
PD
2.8
22.2
W
mW/
°C
Power dissipation at TL =25°C
(d)
Linear derating factor
PD
4.4
35.4
W
mW/
°C
Operating and storage temperature range
Tj, Tstg
-55 to 150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
RθJA
80
°C/W
Junction to ambient
(b)
RθJA
45
°C/W
Junction to lead
(d)
RθJL
28.26
°C/W
NOTES:
(a)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b)
Mounted on FR4 PCB measured at t
≤ 10 sec.
(c)
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d)
Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - August 2008
2
© Diodes Incorporated 2008
www.zetex.com
www.diodes.com



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