ZXMP6A18KTC datasheet(4/8 Pages) DIODES

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ZXMP6A18K

Issue 1 - March 2006

www.zetex.com

Electrical characteristics (at TA = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown voltage V(BR)DSS

-60

ID=-250 A, VGS=0V

Zero gate voltage drain current

IDSS

-1.0

µA

VDS=-60V, VGS=0V

Gate-body leakage

IGSS

100

VGS =±20V, VDS=0V

Gate-source threshold voltage

VGS(th)

-1.0

ID=-250 A, VDS=VGS

Static drain-source on-state

resistance (*)

NOTES:

(*) Measured under pulsed conditions. Width

300µs. Duty cycle

2%.

RDS(on)

0.055

VGS=-10V, ID=-3.5A

0.080

VGS=-4.5V, ID=-2.9A

Forward transconductance (*)(‡)

gfs

8.7

VDS=-15V,ID=-3.5A

Dynamic (‡)

Input capacitance

Ciss

1580

VDS=-30 V, VGS=0V,

f=1MHz

Output capacitance

Coss

160

Reverse transfer capacitance

Crss

140

Switching (†) (‡)

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on delay time

td(on)

4.6

VDD =-30V, ID=-1A

RG=6.0W,VGS=-10V

Rise time

5.8

Turn-off delay time

td(off)

Fall time

Gate charge

VDS=-30V,VGS=-5V,

ID=-3.5A

Total gate charge

VDS=-30V,VGS=-10V,

ID=-3.5A

Gate-source charge

Qgs

3.9

Gate-drain charge

Qgd

9.8

Source-drain diode

Diode forward voltage (*)

VSD

-0.85

-0.95

TJ=25°C, IS=-4.2A,

VGS=0V

Reverse recovery time (‡)

trr

TJ=25°C, IF=-2.1A,

di/dt= 100A/µs

Reverse recovery charge (‡)

Qrr

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