FMMT618

For the circuits described in the applications section

Zetex FMMT618 is the recommended pass transistor.

ZHCS1000

For the maximum brightness circuit described in the

applications section Z etex ZHCS1000 is the

recommended Schottky diode.

The following indicates outline data for the device,

m o re detailed i nform a tion can b e f ound at

www.zetex.com/fmmt618

The following indicates outline data for the ZHCS, more

detailed

i nform a tion

can

b e

f ound

at

www.zetex.com/zhcs1000

ZXSC310

ISSUE 3 - SEPTEMBER 2007

SEMICO NDUC TORS

3

Symbol

Parameter

Conditions

Min

Typ

Max

Units

V

CE(sat)

Collector-Emitter

Saturation Voltage

5

I

I

I

8

70

130

15

150

200

mV

V

(BR)CEO

Collector-Emitter

Breakdown Voltage

5

I

20

27

V

ELECTRICAL CHARACTERISTICS:

Symbol

Parameter

Conditions

Min

Typ

Max

Units

V

F

Forward voltage

I

I

400

500

mV

t

rr

Reverse Recovery Time

Switched from I

I

Measured at I

12

ns

I

R

Reverse Current

V

50

100

µA

ELECTRICAL CHARACTERISTICS:

Part

Number

V

R

I

F

I

FSM

V

I

Capacitance

at V

Package

Max.

V

Max.

mA

Max.

A

Max.

mV

I

F

mA

Max.

A

V

R

V

Typ.

pF

SOT23

BAT54

30

200

0.6

500

30

250

25

10

SOT23-6

ZHCS2000

40

2000

20

500

2000

1000

30

60

SOT23

ZHCS1000

40

1000

12

500

1000

100

30

25

SOT23

ZHCS750

40

750

12

540

750

100

30

25

SOT23

ZHCS500

40

500

6.75

550

500

40

30

20

SOT23

ZHCS400

40

400

6.75

500

400

40

30

20

SOT323