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ZXSC440 数据表(PDF) 2 Page - Diodes Incorporated |
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ZXSC440 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 16 page ![]() ZXSC440 SEMICO NDUC TORS ISSUE 1 - JANUARY 2005 2 PARAMETER LIMIT UNIT VCC -0.3 to +10 V DRIVE -0.3 to VCC + 0.3 V READY -0.3 to VCC + 0.3 V CHARGE -0.3 to The lower of (+5.0) or (VCC +0.3) V VFB, SENSE -0.3 to The lower of (+5.0) or (VCC +0.3) V Operating temperature -40 to +85 °C Storage temperature -55 to +150 °C Power dissipation at 25°C 450 mW ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC VCC range 1.8 8 V Iq (1) Quiescent current VCC =8V 220 A ISTDN Shutdown current 4.5 A Eff (2) Efficiency 85 % AccREF Reference tolerance 1.8V < VCC < 8V -3.0 3.0 % TCOREF Reference temp co 0.005 %/°C TDRV Discharge pulse width 1.8V < VCC < 8V 1.7 s FOSC Operating frequency 200 kHz INPUT PARAMETERS VSENSE Sense voltage 22 28 34 mV ISENSE Sense input current VFB=0V;VSENSE=0V -1 -7 -15 A VFB Feedback voltage 291 300 309 mV IFB (2) Feedback input current VFB=0V;VSENSE=0V -1.2 -4.5 A VIH (3) Shutdown threshold 1.5 V CC V VIL Shutdown threshold 0 0.55 V dVLN Line voltage regulation 0.5 %/V OUTPUT PARAMETERS IDRIVE Transistor drive current VDRIVE = 0.7V 2 3.4 5 mA VDRIVE Transistor voltage drive 0 V CC-0.4 V CDRIVE Mosfet gate drive cpbty 300 pF VOHREADY Ready flag output high IEOR = -300nA, TA=25°C 2.5 V CC V VOLREADY Ready flag output low IEOR =1mA,TA=25°C 0 1 V TREADY TA=25°C 195 s dILD Load current regulation 0.01 %/mA ELECTRICAL CHARACTERISTICS (Test conditions VCC= 3V, T= 25°C unless otherwise stated) NOTES (1) Excluding gate/base drive current. (2) IFB is typically half of these at 3V. (3) Shutdown pin voltage must not exceed (VCC+0.3V) or 5V, whichever is lower. |
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