ZXTP2014Z datasheet(4/6 Pages) DIODES

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ZXTP2014Z

SEMICO NDUC TORS

ISSUE 2 - AUGUST 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

-180

-200

IC = -100 A

Collector-emitter breakdown voltage

BVCER

-180

-200

IC =-1 A, RB

Collector-emitter breakdown voltage

BVCEO

-140

-160

IC =-10mA*

Emitter-base breakdown voltage

BVEBO

-7.0

-8.0

IE =-100 A

Collector cut-off current

ICBO

-20

-0.5

VCB = -150V

VCB = -150V, Tamb=100 C

Collector cut-off current

ICER

-20

-0.5

VCB = -150V

VCB = -150V, Tamb=100 C

Emitter cut-off current

IEBO

-10

VEB =-6V

Collector-emitter saturation voltage

VCE(SAT)

-37

-50

-80

-255

-60

-75

-115

-330

IC = -0.1A, IB =-5mA*

IC = -0.5A, IB = -50mA*

IC =-1A,IB = -100mA*

IC =-3A,IB = -300mA*

Base-emitter saturation voltage

VBE(SAT)

-910

-1010

IC =-3A,IB = -300mA*

Base-emitter turn on voltage

VBE(ON)

-800

-900

IC =-3A,VCE =-5V*

Static forward current transfer ratio

hFE

100

225

200

100

300

IC = -10mA, VCE =-5V*

IC =-1A,VCE =-5V*

IC =-3A,VCE =-5V*

IC = -10A, VCE =-5V*

Transition frequency

120

MHz IC = -100mA, VCE = -10V

f=50MHz

Output capacitance

COBO

VCB = -10V, f= 1MHz*

Switching times

tON

tOFF

636

IC =-1A,VCC = -50V,

IB1 =-IB2 = -100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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