ZXTP07040DFF datasheet(4/6 Pages) DIODES

4 / 6 page

ZXTP07040DFF

Issue 1 - September 2006

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

-50

-80

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-40

-65

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-base breakdown

voltage

BVEBO

-7

-8.3

IE = -100 A

Emitter-collector breakdown

voltage (reverse blocking)

BVECO

-3

-8.6

IE = -100 A

Collector-base cut-off current

ICBO

<-1

-50

VCB = -36V

-20

AVCB = -36V, Tamb= 100°C

Emitter-base cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-110

-180

IC = -0.5A, IB = -5mA(*)

-80

-100

IC = -1A, IB = -100mA(*)

-230

-400

IC = -1A, IB = -10mA(*)

-310

-540

IC = -2A, IB = -40mA(*)

-250

-390

IC = -3A, IB = -150mA(*)

Base-emitter saturation

voltage

VBE(sat)

-935

-1040

IC = -3A, IB = -150mA(*)

Base-emitter turn-on voltage

VBE(on)

-825

-930

IC = -3A, VCE = -2V(*)

Static forward current

transfer ratio

hFE

300

450

800

IC = -10mA, VCE = -2V(*)

250

380

IC = -0.5A, VCE = -2V(*)

200

330

IC = -1A, VCE = -2V(*)

160

IC = -3A, VCE = -2V(*)

Transition frequency

100

200

MHz

IC = -50mA, VCE = -5V

f = 50MHz

Output capacitance

Cobo

VCB = -10V, f = 1MHz(*)

Delay time

20.7

VCC = -10V,

IC = -500mA,

IB1 = IB2= -50mA

Rise time

12.2

Storage time

375

Fall time

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