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ZXTP25020CFH 数据表(PDF) 4 Page - Diodes Incorporated

部件名 ZXTP25020CFH
功能描述  20V, SOT23, PNP medium power transistor
PDF  8 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXTP25020CFH 数据表(HTML) 4 Page - Diodes Incorporated

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ZXTP25020CFH
Issue 3 - March 2008
4
www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BVCBO
-25
-50
V
IC = -100 A
Collector-emitter breakdown
voltage (base open)
BVCEO
-20
-35
V
IC = -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-base breakdown
voltage
BVEBO
-7
-8.2
V
IE = -100 A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
-7
-8.0
V
IE = -100 A
(*) R
BC < 10k
or -0.25 < VBC < 0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
-7
-8.8
V
IE = -100 A
(*)
Collector-base cut-off
current
ICBO
<-1
-50
-20
nA
A
VCB = -20V
VCB = -20V, Tamb= 100°C
Emitter-base cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-43
-55
mV
IC = -1A, IB = -100mA
(*)
-70
-100
mV
IC = -1A, IB = -20mA
(*)
-120
-170
mV
IC = -2A, IB = -40mA
(*)
-150
-210
mV
IC = -4A, IB = -200mA
(*)
Base-emitter saturation
voltage
VBE(sat)
-930
-1050
mV
IC = -4A, IB = -200mA
(*)
Base-emitter turn-on voltage
VBE(on)
-810
-900
mV
IC = -4A, VCE = -2V
(*)
Static forward current
transfer ratio
hFE
200
350
500
IC = -10mA, VCE = -2V
(*)
150
250
IC = -1A, VCE = -2V
(*)
85
140
IC = -4A, VCE = -2V
(*)
40
IC = -10A, VCE = -2V
(*)
Transition frequency
fT
285
MHz IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance
COBO
32.4
40
pF
VCB = -10V, f = 1MHz
(*)
Delay time
td
38.4
ns
VCC = -15V.
IC = -750mA,
IB1 = IB2= -15mA
Rise time
tr
49.2
ns
Storage time
ts
168
ns
Fall time
tf
55
ns



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