WTC2301_10 datasheet(2/6 Pages) WEITRON

部件名	WTC2301

功能描述	P-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	WEITRON [Weitron Technology]

网页	http://www.weitron.com.tw

标志

2 / 6 page

WTC2301

WEITRON

http://www.weitron.com.tw

Electrical Characteristics (TA = 25℃ Unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS=0,ID=-250μA

V(BR)DSS

-20

Gate-Source Threshold Voltage

VDS=VGS,ID=-250μA

VGS(Th)

-0.45

Gate-Source L eakage C urrent

VGS= ±8 V

IGSS

±100

-0.95

-1

Drain- Sou rce Leakage Current(Tj=25˚C)

VDS=-9.6V,VGS =0

IDSS

μA

Drain-Source On-Resistance 2

VGS=-4.5V,I D=-2.8A

VGS=-2.5V,I D=-2.0A

RDS(o n)

100

150

mΩ

Forward Transconductance

VDS=-5.0 V, ID=-4.0A

gfs

6.5

Dynamic

Input Capacitance

Ciss

Output Capacitance

Coss

145.54

882.51

97.26

Reverse Transfer Capacitance

VGS=0V,VDS=-6V,f=1.0MHz

Crss

2/6

Rev.D 29-Mar-10

WTC2301 数据表(PDF) 2 Page - Weitron Technology

WTC2301 数据表(HTML) 2 Page - Weitron Technology

Html Pages

1 2 3 4 5 6

数据表下载