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MPC5634M 数据表(PDF) 129 Page - Freescale Semiconductor, Inc |
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MPC5634M 数据表(HTML) 129 Page - Freescale Semiconductor, Inc |
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129 / 132 page ![]() MPC5634M Microcontroller Data Sheet, Rev. 8 Freescale Semiconductor 129 Rev. 5 (cont.) 04/2010 Changes to flash memory specifications: •TBKPRG 64 KB specification removed (not present in this device) •T64kpperase specification added • Flash module life P/E spec for 32 Kbyte blocks also applies to 64 Kbyte blocks Pad AC specifications (3.3 V) table updated Rev. 6 04/2010 “Core Voltage Regulator Controller External Components Preferred Configuration” circuit diagram updated. • Clarification added to note: Emitter and collector capacitors (6.8 F and 10 F) should be matched (same type) and ESR should be lower than 200 mW. (Added emphasis that only 6.8 F emitter capacitors need to be matched with collector capacitor. •220 F emitter capacitors changed to 220 nF. Rev. 7 4/2010 No specification or product information changes: • Mechanical outline drawings section renamed to “Packages” and restructured. • Rev. 8 01/2011 Removed the 208 BGA package from the device-summary table. Revised the “PMC Operating conditions and external regulators supply voltage” table. Revised the “PMC electrical characteristics” table. Revised the pad AC specifications. Revised the “DC electrical specifications” table. Revised the “DSPI LVDS pad specification” table: Revised the “PLLMRFM electrical specifications” table. Change to “Temperature sensor electrical characteristics” table: • Accuracy is guaranteed by production test Revised the “eQADC conversion specifications (operating)” table. Changes to “Calibration bus operation timing” table: • CLKOUT period is guaranteed by production test. All other parameters are guaranteed by design Changes to “Program and erase specifications” table in “Flash memory electrical characteristics” section. • Deleted Bank Program (512KB) (TBKPRG) parameter • TYP P/E values added for 32- and 64 KB blocks and for 128 KB blocks. Changes to Recommended operating characteristics for external power transistor: • VCESAT should be between 200 and 600 mV • VBE should be 0.4V to 1.0V Removed footnote 8 from Vddeh in Maximum ratings. Deleted engineering names for pads in Power UP/DOWN Sequencing Section Changed “sin_c” to DSPI_C_SIN” and “sck_c” to DSPI_C_SCK” on 144 pin LQFP package. Updated the “Electromagnetic Interference Characteristics” table to reflect new parameter levels, test conditions. In the “APC, RWSC, WWSC settings vs. frequency of operation” table, changed 82 MHz entry for WWC from “11” to “01”, added an extra row for “All 111 111 11” Table 40. Revision history (continued) Revision Date Description of Changes |
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