APTM120DA30CT1G

www.microsemi.com

1 – 5

11

CR1

Q2

10

9

12

NTC

12

3

4

6

5

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

1200

V

31

Continuous Drain Current

23

Pulsed Drain current

195

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

360

m

Ω

Maximum Power Dissipation

657

W

Avalanche current (repetitive and non repetitive)

25

A

Application

•

AC and DC motor control

•

Switched Mode Power Supplies

•

Power Factor Correction

Features

•

Power MOS 8™ MOSFET

-

-

Low input and Miller capacitance

-

Low gate charge

-

Avalanche energy rated

-

Very rugged

• SiC Schottky Diode

-

Zero reverse recovery

-

Zero forward recovery

-

Temperature Independent switching behavior

-

Positive temperature coefficient on VF

•

Very low stray inductance

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS Compliant

Boost chopper

MOSFET + SiC chopper diode

Power Module