CMPF4391

CMPF4392

CMPF4393

SURFACE MOUNT

N-CHANNEL

SILICON JFET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPF4391 series

types are N-Channel Silicon Field Effect Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

switching applications.

MARKING CODE:

CMPF4391:

6J

CMPF4392:

6K

CMPF4393:

6G

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Gate Voltage

VGD

40

V

Gate-Source Voltage

VGS

40

V

Drain-Source Voltage

VDS

40

V

Gate Current

IG

50

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPF4391

CMPF4392

CMPF4393

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN MAX

MIN MAX

UNITS

IGSS

VGS=20V

-

0.1

-

0.1

-

0.1

nA

IGSS

VGS=20V, TA=100°C

-

0.2

-

0.2

-

0.2

µA

IDSS

VDS=20V

50

150

25

75

5.0

30

mA

ID(OFF)

VDS=20V, VGS=12V

-

0.1

-

-

-

-

nA

ID(OFF)

VDS=20V, VGS=7.0V

-

-

-

0.1

-

-

nA

ID(OFF)

VDS=20V, VGS=5.0V

-

-

-

-

-

0.1

nA

ID(OFF)

VDS=20V, VGS=12V, TA=100°C

-

0.2

-

-

-

-

µA

ID(OFF)

VDS=20V, VGS=7.0V, TA=100°C

-

-

-

0.2

-

-

µA

ID(OFF)

VDS=20V, VGS=5.0V, TA=100°C

-

-

-

-

-

0.2

µA

BVGSS

IG=1.0µA

40

-

40

40

-

V

VGS(OFF)

VDS=20V, ID=1.0nA

4.0

10

2.0

5.0

0.5

3.0

V

VGS(f)

IG=1.0mA

-

1.0

-

1.0

-

1.0

V

VDS(ON)

ID=12mA

-

0.4

-

-

-

-

V

VDS(ON)

ID=6.0mA

-

-

-

0.4

-

-

V

VDS(ON)

ID=3.0mA

-

-

-

-

-

0.4

V

rDS(ON)

ID=1.0mA, VGS=0

-

30

-

60

-

100

Ω

rds(ON)

VGS=0, ID=0, f=1.0kHz

-

30

-

60

-

100

Ω

Ciss

VDS=20V, VGS=0, f=1.0MHz

-

14

-

14

-

14

pF

SOT-23 CASE

R5 (27-January 2010)

www.centra lsemi.com