CMPT3640

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3640 type is

a PNP silicon transistor manufactured by the epitaxial

planar process, epoxy molded in a surface mount

package, designed for saturated switching applications.

MARKING CODE: C2J

SOT-23 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

12

V

Collector-Emitter Voltage

VCEO

12

V

Emitter-Base Voltage

VEBO

4.0

V

Continuous Collector Current

IC

80

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=6.0V

10

nA

ICES

VCE=6.0V, TA=65°C

10

µA

IB

VCE=6.0V, VEB=0

10

nA

BVCBO

IC=100µA

12

V

BVCEO

IC=10mA

12

V

BVEBO

IE=100µA

4.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.20

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.60

V

VCE(SAT)

IC=10mA, IB=1.0mA, TA=65°C

0.25

V

VBE(SAT)

IC=10mA, IB=0.5mA

0.75

0.95

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.80

1.00

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.50

V

hFE

VCE=0.3V, IC=10mA

30

120

hFE

VCE=1.0V, IC=50mA

20

fT

VCE=5.0V, IC=10mA, f=100MHz

500

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

3.5

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

3.5

pF

td

VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA

10

ns

tr

VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA

30

ns

R5 (1-February 2010)

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