CMPT3820

SURFACE MOUNT

VERY LOW VCE(SAT)

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3820 is

a very low VCE(SAT) NPN Transistor, designed for

applications where size and efficiency are prime

requirements. Packaged in an industry standard

SOT-23, this device brings updated electrical

specifications and characteristics suitable for the

most demanding designs.

MARKING CODE: 38C

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

2.0

A

Continuous Base Current

IB

300

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=60V

100

nA

IEBO

VEB=5.0V

100

nA

BVCBO

IC=100µA

80

V

BVCEO

IC=10mA

60

V

BVEBO

IE=100µA

5.0

V

VCE(SAT)

IC=100mA, IB=1.0mA

0.115

V

VCE(SAT)

IC=500mA, IB=50mA

0.15

V

VCE(SAT)

IC=1.0A, IB=100mA

0.28

V

VBE(SAT)

IC=1.0A, IB=50mA

1.1

V

VBE(ON)

VCE=5.0V, IC=1.0A

0.9

V

hFE

VCE=5.0V, IC=1.0mA

200

hFE

VCE=5.0V, IC=500mA

200

hFE

VCE=5.0V, IC=1.0A

100

fT

VCE=10V, IC=50mA

150

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

10

pF

FEATURES:

APPLICATIONS:

Digital Cameras, PDAs, Laptops, etc.

SOT-23 CASE

R1 (1-February 2010)

www.centra lsemi.com