CXT853

SURFACE MOUNT

HIGH CURRENT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT853 type is

a high current, high voltage silicon NPN transistor.

Packaged in the SOT-89 surface mount case,

the CXT853 is ideal for industrial and consumer

applications requiring high energy efficiency in a small

package.

MARKING: FULL PART NUMBER

SOT-89 CASE

SYMBOL

UNITS

Collector-Base Voltage

VCBO

200

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

6.0

A

Power Dissipation

PD

1.2

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

104

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=150V

10

nA

ICBO

VCB=150V, TA=100°C

1.0

μA

ICER

VCE=150V, RBE≤1.0kΩ

10

nA

IEBO

VEB=6.0V

10

nA

BVCBO

IC=100μA

200

220

V

BVCER

IC=10mA, RBE≤1.0kΩ

200

210

V

BVCEO

IC=10mA

100

110

V

BVEBO

IE=100μA

6.0

8.0

V

VCE(SAT)

IC=100mA, IB=5mA

22

50

mV

VCE(SAT)

IC=2.0A, IB=100mA

135

170

mV

VCE(SAT)

IC=5.0A, IB=500mA

340

mV

VBE(SAT)

IC=5.0A, IB=500mA

1.25

V

FEATURES:

• Low Saturation Voltage:

VCE(SAT)=0.340V MAX @ IC=5.0A

• PNP Complement: CXT953

APPLICATIONS:

• Power Management

• Motor Driving

• DC/DC Converters

• Switching

R1 (23-February 2010)

www.centr a lsemi.com