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STL150N3LLH6 数据表(PDF) 1 Page - STMicroelectronics |
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STL150N3LLH6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() September 2009 Doc ID 15345 Rev 2 1/12 12 STL150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STL150N3LLH6 30 V 0.0024 Ω 33 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ ( 6x5 ) Table 1. Device summary Order code Marking Package Packaging STL150N3LLH6 150N3LLH6 PowerFLAT™ (6x5) Tape and reel www.st.com |
类似零件编号 - STL150N3LLH6 |
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类似说明 - STL150N3LLH6 |
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