MD8IC970N datasheet(2/14 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MD8IC970NR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +70

Vdc

Gate--Source Voltage

VGS

--0.5, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature (1,2)

225

°C

Input Power

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Final Application

Thermal Resistance, Junction to Case

Case Temperature 80°C, 35 W Avg. Two--Tone

Stage 1, 28 Vdc, IDQ1(A+B) = 60 mA, f1 = 939.9 MHz, f2 = 940.1 MHz

Stage 2, 25 Vdc, IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz

RθJC

2.9

0.6

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1A (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

I (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

°C

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics (4)

Zero Gate Voltage Drain Leakage Current

(VDS =70 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =1.5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Stage 1 — On Characteristics (4)

Gate Threshold Voltage

(VDS =10 Vdc, ID =40 μAdc)

VGS(th)

1.2

2.0

2.7

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ1(A+B) =60 mAdc)

VGS(Q)

—

3.1

—

Vdc

Fixture Gate Quiescent Voltage

(VDD1 =28 Vdc, IDQ1(A+B) = 60 mAdc, Measured in Functional Test)

VGG(Q)

9.0

10.0

11.0

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Side A and Side B are tied together for this measurement.

(continued)

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