2N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-480.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

2.4

A

Continuous

2.4

A

Drain Current

Pulsed (Note 1)

9.6

A

Single Pulsed (Note 2)

180

mJ

Avalanche Energy

Repetitive (Note 1)

8.5

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.0

V/ns

TO-220F

24

W

Power Dissipation

TO-252

43

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

TO-220F

62.5

°C/W

Junction to Ambient

TO-252

110

°C/W

TO-220F

5.2

°C/W

Junction to Case

TO-252

2.85

°C/W