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2SA1740G-X-AB3-R 数据表(PDF) 4 Page - Unisonic Technologies |
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2SA1740G-X-AB3-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() 2SA1740 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R208-026,B TYPICAL CHARACTERISTICS -20 0 0 -40 -60 -0.8 -1.2 -1.4 Collector Current vs. Base to Emitter Voltage Base to Emitter Voltage, VBE(V) -1.0 -80 -0.2 -0.4 -0.6 -100 -120 VCE=-10V TA= -30℃ TA=25℃ TA=70℃ 7 DC Current Gain vs.Collector Current 5 2 2 Collector Current,Ic(mA) 3 5 7 100 3 5 7 10 VCE=-10V -1.0 2 3 57 -100 23 5 7 -10 23 TA= -30℃ TA=25℃ TA=70℃ Switch Time vs.Collector Current 5 2 Collector Current,Ic( mA) 3 5 7 1.0 7 0.1 35 7 100 23 5 7 10 2 3 2 3 5 7 10 5 tstg ton tf VCC=-150V -10IB1=10IB2=IC Collector Current vs.Collector to Emitter Voltage 5 2 Collector to Emitter Voltage,VCE(V) 3 5 7 1.0 7 0.1 3 57 100 23 5 7 10 23 5 2 3 5 7 100 2 3 5 7 Icp Ic 10ms 100ms 1ms DC Operation *Single pulse Ta=25℃ Mounted on ceramic board (250mm 2*0.8mm) 60 40 20 0 1.0 80 140 120 100 0.8 1.2 1.4 1.6 Collector Dissipation vs.Ambient Temperature 0.2 0.4 0.6 0 Ambient Temperature ,Ta (℃) Mounted on ceramic board (250mm 2*0.8mm) 160 7 Collector to Emitter Saturation Voltage vs.Collector Current 5 2 2 Collector Current,Ic( mA) 3 5 7 -1.0 3 5 7 -0.1 Ic/IB=10 -1.0 2 3 5 7 -100 23 5 7 -10 2 TA=25℃ TA=70℃ TA=-30℃ |
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