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2SB772S-X-AA3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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2SB772S-X-AA3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 3 page ![]() 2SB772S PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R208-002.E ■ TYPICAL CHARACTERICS Collector Current, Ic (mA) -100 -101 -102 -103 -104 -10-1 -103 -102 -101 -1 Collector-Emitter Saturation Voltage vs. Collector Current 25°C IC/IB=10 150°C Collector-Emitter Voltage, VCE (V) 01 2 3 45 0 0.4 0.8 1.6 2.0 1.2 Collector Current vs. Collector-Emitter Voltage Collector Current, Ic (mA) -10-1 -100 -101 -102 -103 -104 0 200 400 600 800 V CE=-2V 150°C 25°C DC Current Gain vs. Collector Current Collector Current, Ic (mA) -100 -101 -102 -103 -104 -10-1 0 -0.4 -0.8 -1.2 Base-Emitter Saturation Voltage vs. Collector Current IC/IB=10 25°C 150°C |
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