2SB857-X-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB857

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R217-006.E

ABSOLUTE MAXIMUM RATING (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltages

VCBO

-130

Collector-Emitter Voltage

VCEO

-100

Emitter-Base Voltage

VEBO

-5

Collector Current

-4

Collector Current (IC Peak)

IC(PEAK)

-8

TO-126C

TO-220

Total Power Dissipation (TC=25°C)

TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-50~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO IC=-10μA, IE=0

-130

Collector-Emitter Breakdown Voltage

BVCEO IC=-50mA, IB=0

-100

Emitter-Base Breakdown Voltage

BVEBO IE=-10μA, IC=0

-5

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-2A, IB=-0.2A (Note)

-1

Base-Emitter Saturation Voltage

VBE(ON) VCE=-4V, IC=-1A (Note)

-1

Collector Cut-off Current

ICBO

VCB=-130V, IC=0

-1

μA

hFE1

VCE=-4V, IC=-0.1A (Note)

DC Current Gain

hFE2

VCE=-4V, IC=-1A (Note)

320

Transition Frequency

VCE=-4V, IC=-500mA, f=100MHz

MHz

Note: Pulse Test: Pulse Width≤380μS, Duty Cycle≤2%.

CLASSIFICATION OF hFE2

CLASSIFICATION

RANGE

60 ~ 120

100 ~ 200

160 ~ 320

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