2SB1151L-X-AA3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB1151

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-022.C

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-60

Emitter-Base Voltage

VEBO

-7

-5

Collector Current

Pulse(Note 2)

ICP

-8

Base Current

-1

SOT-223

TO-126

1.5

Power Dissipation (Ta=25°C)

TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.PW

≤10ms, Duty Cycle≤50%

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Voltage

BVCBO

IC=-100uA, IE=0

-60

Collector-Emitter Voltage

BVCEO

IC=-1mA, IB=0

-60

Emitter-Base Voltage

BVEBO

IE=-100uA, Ic=0

-7

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-10

µA

Emitter Cut-off Current

IEBO

VEB=-7V, IC=0

-10

µA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-2A, IB=-0.2A

-0.14

-0.3

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-2A, IB=-0.2A

-0.9

-1.2

hFE 1

VCE=-1V, IC=-0.1A

hFE 2

VCE=-1V, IC=-2A

160

400

DC Current Gain

hFE 3

VCE=-2V, IC=-5A

Turn On Time

tON

0.15

µS

Storage Time

tSTG

0.78

2.5

µS

Switching Time

Fall Time

0.18

µS

Pulse test : PW

≤350 µS, Duty Cycle≤2% Pulse

CLASSIFICATION OF hFE2

RANK

RANGE

160 ~ 320

200 ~ 400

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