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2SB1198L-X-AE3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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2SB1198L-X-AE3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-040,B TYPICAL CHARACTERISTICS 0 -0.2 -2 -1m Base to Emitter Voltage, VBE (V) Figure 1. Grounded Emitter Propagation Characteristics -0.4 -0.6 -0.8 -1.4 -1.2 -1.0 -2m -5m 0 -0.5 0 Collector To Emitter Voltage, VCE (V) Figure 2. Grounded Emitter Output Characteristics -0.1 -0.4 -0.8 -1.6 -2.0 -1.2 -0.2 -0.3 -0.4 IB =0mA Ta=25℃ -1.0mA -0.5mA -10m -30mA -45mA -5.0mA -1.5mA -20mA -25mA -20m -50m -100m -200m -500m -1 -5 -10 VCE = -3V Ta=25℃ Ta=100℃ Ta= -25℃ -40mA -35mA Figure 5. Collector-emitter Saturation Voltage vs. Collector Current (II) Collector Current, IC (mA) -20m -10m -50m -100m -200m -10 -100 -500m -1 -1 Ta= 100℃ IC/IB=10 -2 -1A Ta= 25℃ Ta= -25℃ Figure 6. Collector-Emitter Saturation Voltage vs. Collector Current (III) Collector Current, IC (mA) -20m -10m -50m -100m -200m -10 -100 -500m -1 -1 Ta= 100℃ IC/IB=20 -2 -1A Ta= 25℃ Ta= -25℃ |
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