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2SC945 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SC945
功能描述  AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SC945 数据表(HTML) 2 Page - Unisonic Technologies

  2SC945 Datasheet HTML 1Page - Unisonic Technologies 2SC945 Datasheet HTML 2Page - Unisonic Technologies 2SC945 Datasheet HTML 3Page - Unisonic Technologies 2SC945 Datasheet HTML 4Page - Unisonic Technologies  
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2SC945
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-005,C
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Dissipation(Ta=25
°C)
PC
250
mW
Collector Current
IC
150
mA
Base Current
IB
50
mA
Junction Temperature
TJ
125
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100μA, IE=0
60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
50
V
Collector Cut-Off Current
ICBO
VCB=40V, IE=0
100
nA
Emitter Cut-Off Current
IEBO
VEB=3V, IC=0
100
nA
DC Current Gain
hFE
VCE=6V, IC=1mA
90
600
Collector-Emitter Saturation Voltage
VCE(SAT) Ic=100mA, IB=10mA
0.1
0.3
V
Current Gain Bandwidth Product
fT
VCE=10V, IC=50mA
100
190
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
2.0
3.0
pF
Noise Figure
NF
IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz
4.0
6.0
dB
CLASSIFICATION OF hFE
RANK
R
Q
P
K
RANGE
90-180
135-270
200-400
300-600



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