2SC3149

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R204-024.a

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

1200

V

Collector-emitter voltage

800

V

Emitter-Base Voltage

7

V

Collector Current

0.5

A

Collector Dissipation

2

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

1200

V

Collector-Emitter Breakdown Voltage

800

V

Emitter-Base Breakdown Voltage

7

V

Collector Cutoff Current

10

μA

Emitter Cutoff Current

10

μA

DC Current Gain (Note)

10

40

Collector-Emitter Saturation Voltage

0.8

V

Base-Emitter Saturation Voltage

1.5

V

Current Gain Bandwidth Product

15

MHz

Output Capacitance

30

pF

Turn-On Time

1.0

μs

Storage Time

3.0

μs

Fall Time

0.7

μs

Note: Pulse test: Pulse width=300μs, Duty Cycle≦2%

RANK

K

L

M

RANGE

10 ~ 20

15 ~ 30

20 ~ 40

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.