2SC3356-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SC3356

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-024,D

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

BVCBO

Collector to Emitter Voltage

BVCEO

Emitter to Base Voltage

BVEBO

Collector Current

100

Power Dissipation

200

Junction Temperature

150

°С

Storage Temperature

TSTG

-65~ +150

°С

Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Cut-Off Current

ICBO

VCB =10 V,IE =0

1.0

μA

Emitter-Base Cut-Off Current

IEBO

VEB =1 V, IC=0

1.0

μA

DC Current Gain

hFE

VCE =10 V, IC =20 mA

300

Gain Bandwidth Product

VCE =10 V, IC =20 mA

GHz

Feed-Back Capacitance

CRE

VCB =10 V, IE =0, f =1.0MHz

1.0

Noise Figure

VCE =10 V, IC =7mA, f =1.0GHz

2.0

CLASSIFICATION OF hFE

RANK

RANGE

50-160

160-240

240-300

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