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2SC3647L-X-AB3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SC3647L-X-AB3-R
功能描述  HIGH-VOLTAGE SWITCHING APPLICATIONS
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SC3647L-X-AB3-R 数据表(HTML) 2 Page - Unisonic Technologies

  2SC3647L-X-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SC3647L-X-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SC3647L-X-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SC3647L-X-AB3-R Datasheet HTML 4Page - Unisonic Technologies 2SC3647L-X-AB3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SC3647
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
5
www.unisonic.com.tw
QW-R208-039,C
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
3
A
Collector Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC = 10μA, IE =0
120
V
Collector-Emitter Breakdown Voltage
BVCEO
IC = 1mA, RBE =∞
100
V
Emitter-Base Breakdown Voltage
BVEBO
IE = 10μA, IC=0
6
V
Collector Cutoff Current
ICBO
VCB = 100V, IE =0
100
nA
Emitter Cutoff Current
IEBO
VEB = 4V, IC =0
100
nA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC = 1A, IB = 100mA
0.13
0.4
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = 1A, IB = 100mA
0.85
1.2
V
Output Capacitance
Cob
VCB = 10V, f =1MHz
16
pF
DC Current Gain
hFE
VCE = 5V, IC = 100mA
100
400
Turn-ON Time
tON
See specified Test Circuit.
80
ns
Storage Time
tSTG
See specified Test Circuit.
1000
ns
Fall Time
tF
See specified Test Circuit.
50
ns
Gain-Bandwidth Product
fT
VCE = 10V, IC = 100mA
120
MHz
■
CLASSIFICATION OF hFE
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400



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