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2SC3669 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC3669 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC2SC3669 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R209-015,A PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Turn-on Time ton 0.2 Storage Time tstg 1.0 Switching Time Fall Time tf IB1 IB2 20μs INPUT OUTPUT IB1 IB2 Vcc=30 V IB1= -IB2=0.05A DUTY CYCLE≦1% 0.2 μ s CLASSIFICATION OF hFE1 RANK O Y RANGE 70-140 120-240 ELECTRICAL CHARACTERISTICS CURVES Ic-VCE Collector -Emitter Voltage, VcE (V) 0 24 6 10 0 0.4 0.8 1.2 1.6 12 2.0 8 Common Emitter Ta=25℃ IB=5mA 10 15 20 25 35 VCE-Ic Collector Current, Ic (A) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 2.4 1 1.6 Common Emitter Ta=25℃ IB=5mA 10 15 20 30 40 50 VCE-Ic Collector Current, Ic (A) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 2.4 1 1.6 Common Emitter Ta=100℃ IB=5mA 10 15 20 30 40 50 VCE-Ic Collector Current, Ic (A) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 2.4 1 1.6 Common Emitter Ta=-55℃ IB=5mA 10 15 20 30 40 50 70 |
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