2SC4672G-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SC4672

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-004.D

ABSOLUATE MAXIUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current

Collector Current (Pulse) (Note 1)

ICP

Collector Dissipation

500

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: 1.Single pulse, PW=10ms

2.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC =50μA

Collector-Emitter Breakdown Voltage

BVCEO

IC =1mA

Emitter-Base Breakdown Voltage

BVEBO

IE =50μA

Collector Cutoff Current

ICBO

VCB=60V

0.1

μA

Emitter Cutoff Current

IEBO

VEB=5V

0.1

μA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC /IB=1A/50mA (Note)

0.1

0.35

DC Current Transfer Ratio

hFE

VCE=2V, IC =0.5A (Note)

120

400

Transition Frequency

VCE=2V, IE =-0.5A, f=100MHz

210

MHz

Output Capacitance

COB

VCB=10V, IE =0A,f=1MHz

Note : Measured using pulse current.

■

CLASSIFICATION OF hFE

RANK

RANGE

120 ~ 240

200 ~ 400

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