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2SD468 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SD468
功能描述  LOW FREQUENCY POWER AMPLIFIER
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SD468 数据表(HTML) 2 Page - Unisonic Technologies

  2SD468 Datasheet HTML 1Page - Unisonic Technologies 2SD468 Datasheet HTML 2Page - Unisonic Technologies 2SD468 Datasheet HTML 3Page - Unisonic Technologies 2SD468 Datasheet HTML 4Page - Unisonic Technologies  
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2SD468
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R211-003.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Collector Peak Current
ICP
1.5
A
Collector Power Dissipation
PC
0.9
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=10
µA, I
E=0
25
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=1mA, RBE=∞
20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA, IC=0
5
V
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
1
µA
DC Current Transfer Ratio
hFE
VCE=2V, Ic=0.5A (Note)
85
240
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=0.8A, IB=0.08A (Note)
0.2
0.5
V
Base-Emitter Voltage
VBE
VCE=2V, Ic=0.5A (Note)
0.79
1
V
Gain Bandwidth Product
fT
VCE=2V, Ic=0.5A (Note)
190
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
22
pF
Note: Pulse test
CLASSIFICATION OF hFE
RANK
B
C
RANGE
85 - 170
120 - 240



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