2SD1664

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-025.C

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

32

V

Emitter-Base Voltage

5

V

Collector Current

DC

1

A

Collector Current (Duty=1/2, PW=20ms)

Pulse

2

A

Collector Power Dissipation

0.5

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

40

V

Collector Emitter Breakdown Voltage

32

V

Emitter Base Breakdown Voltage

5

V

Collector Cut-Off Current

0.5

μA

Emitter Cut-Off Current

0.5

μA

DC Current Gain

82

390

Collector-Emitter Saturation Voltage

0.15

0.4

V

Transition Frequency

150

MHz

Output Capacitance

15

pF

RANK

P

Q

R

RANGE

82-180

120-270

180-390