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2SD1664G-X-AB3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 2SD1664G-X-AB3-R
功能描述  MEDIUM POWER NPN TRANSISTOR
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SD1664G-X-AB3-R 数据表(HTML) 3 Page - Unisonic Technologies

  2SD1664G-X-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SD1664G-X-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SD1664G-X-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SD1664G-X-AB3-R Datasheet HTML 4Page - Unisonic Technologies  
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2SD1664
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R208-025.C
TYPICAL CHARACTERISTICS
0
0.2
500
1
Base-Emitter Voltage, VBE(V)
Grounded Emitter Propagation Characteristics
200
12
5 10 20
200
50
Collector Current, IC(mA)
DC Current Gain vs.Collector Current (I)
100
0.4
0.6
0.8
1.6
1.4
1.2
1.0
2
5
10
VCE =6V
Ta=100°C
Ta=25°C
Ta= 55°C
0
500
0
Collector-Emitter Voltage, VCE(V)
Grounded Emitter Output Characteristics
100
0.4
0.8
1.6
2.0
1.2
200
300
400
2.0mA
IB =0mA
Ta=25°C
2.5mA
1.5mA
1.0mA
0.5mA
3.0mA
3.5mA
4.0mA
4.5
mA
50 100 200 500 1000
500
1000
Ta=25°C
VcE= 3V
VcE= 1V
12
5 10 20
200
50
Collector Current, IC(mA)
DC Current Gain vs.Collector Current (II)
100
50 100 200 500 1000
500
1000
VcE= 3V
Ta=100°C
Ta=25°C
Ta= -55°C
12
5
10 20
0.05
0.01
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage vs.
Collector Current (I)
0.02
50 100 200
500 1000
0.1
0.2
0.5
Ta=25°C
IC/IB=10
20
50
100
2000
2000
IC/IB=50
IC/IB=20
12
5
10 20
0.05
0.01
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage vs.
Collector Current (II)
0.02
50 100 200
500 1000
0.1
0.2
0.5
Ta=25°C
Ta=100°C
Ta=-40°C
IC/ IB=10



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